Methods of post-contact back end of line through-hole via integration

ABSTRACT

Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. In one embodiment, the method comprises forming metal plug contacts through a hard mask and a premetal dielectric to transistors in the semiconductor. The method also includes etching a hole for a through-hole via through the hard mask to the semiconductor using a patterned photoresist process, removing the patterned photoresist and using a hard mask process to etch the hole to an amount into the semiconductor. The method further includes depositing a dielectric liner to isolate the hole from the semiconductor, depositing a gapfill metal to fill the hole, and planarizing the surface of the substrate to the hard mask. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.

CROSS REFERENCE

This application is related to U.S. patent application Ser. No.11/641,364, filed Dec. 18, 2006, to Dordi et al.; U.S. patentapplication Ser. No. 11/641,361; U.S. patent Application Docket #XCR-006, titled “METHODS AND APPARATUSES FOR THREE DIMENSIONALINTEGRATED CIRCUITS,” to Boyd et al., filed same day as for presentapplication; and U.S. patent Application Docket # XCR-007, titled“METHODS AND SYSTEMS FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT THROUGHHOLE VIA GAPFILL AND OVERBURDEN REMOVAL,” to Boyd et al., filed same dayas for present application; all of these patents and/or applications areincorporated herein, in their entirety, by this reference.

BACKGROUND

This invention pertains to three dimensional integrated circuits andmethods, of fabricating three-dimensional integrated circuits; morespecifically this invention relates to methods of post-contact back endof line through-hole via integration for interconnect metallization forthree-dimensional integrated circuits.

A three-dimensional integrated circuit includes two or moresemiconductor chips with integrated circuits or includes two or moresemiconductor wafers with integrated circuits. The semiconductor chipsor semiconductor wafers are stacked together, bonded, and electricallyinterconnected in three dimensions, i.e., integrated within thesemiconductor chips or semiconductor wafers and integrated between thesemiconductor chips or semiconductor wafers. The interconnectionsbetween the chips or between the wafers are accomplished by way ofthrough holes from the back side to the front side of one or more of thechips or one or more of the semiconductor wafers. In other words, theelectrical connections between the stack of chips or stack of wafers aremade by way of the through holes. Three-dimensional integrated circuitsmay have a large number of through holes for interconnect metallizationbetween the semiconductor chips or between the semiconductor wafers.

Three-dimensional integrated circuits, according to some designs, willuse through-hole vias that are large, high aspect ratio features withdimensions an order of magnitude or more larger than the minimumgeometry features for standard technology dual damascene metallizationinterconnects. The through hole vias may require diameters of about 5-10micrometers. The length for some of the through holes may be about 25micrometers or more. Consequently, the aspect ratios for processing thethrough holes are extremely high in comparison to standard technologiesfor fabricating two-dimensional integrated circuits. Typical processesfor fabricating two-dimensional integrated circuits cannot easily handlethe large holes and extremely high aspect ratios that will be requiredfor fabricating three-dimensional integrated circuits.

Furthermore, the process steps and process conditions required forforming the through hole vias to achieve three-dimensional integrationare incompatible with many of the standard technology front end of line(FEOL) processes and standard back end of line (BEOL) processes used forthe within wafer two-dimensional integration for fabricatingsemiconductor devices. Modifications to the standard FEOL processesand/or standard BEOL processes can be made but at what may beunacceptably high costs and risks. In other words, it is generallyundesirable to manufacturers of semiconductor devices to develop andimplement new processes. For some semiconductor fabrication processes,even minor modifications to the process can incur a substantial learningcurve, which can be both time consuming and costly because ofdevelopment costs and the tremendous costs associated with testing,process integration, and yield optimization.

Clearly, there is a need for device structures and processes formanufacturing substrates for three-dimensional integrated circuits thatdo not require extensive modifications to the standard technologies ofFEOL processing or BEOL processing. The practical fabrication ofthree-dimensional integrated circuits will require new processes thatcan meet the requirements for metallization of three-dimensionalintegrated circuits. More specifically, there is a need for newprocesses capable of meeting the unusual aspect ratio requirements forthrough hole via metallization for three-dimensional integrated circuitswhile requiring little or no significant modifications to standardtechnology FEOL processes and BEOL processes used for the within wafertwo-dimensional integration.

SUMMARY

This invention pertains to three-dimensional integrated circuits andmethods of fabricating three-dimensional integrated circuits thatinclude post-contact back end of line through-hole via integration forthree-dimensional integrated circuits.

The present invention seeks to overcome one or more of the deficienciesin the standard technologies for fabricating three-dimensionalintegrated circuits such as integrated stacks of semiconductor chips orsemiconductor wafers with integrated circuits.

One aspect of the present invention is a method of processing substratescomprising a semiconductor for three-dimensional integrated circuits. Inone embodiment, the method comprises forming metal plug contacts througha hard mask and a premetal dielectric to transistors in thesemiconductor. The method also includes etching a hole for athrough-hole via through the hard mask to the semiconductor using apatterned photoresist process, removing the patterned photoresist andusing a hard mask process to etch the hole to an amount into thesemiconductor. The method further includes depositing a dielectric linerto isolate the hole from the semiconductor, depositing a gapfill metalto fill the hole, and planarizing the surface of the substrate to thehard mask.

Another embodiment of the present invention is a method of processingsubstrates for three-dimensional integrated circuits. The methodcomprises forming metal plug contacts through a premetal dielectric totransistors in a semiconductor and etching a hole for a through-hole viathrough the premetal dielectric to an amount into the semiconductor. Themethod also includes depositing a dielectric liner to isolate the holefrom the semiconductor, depositing a gapfill metal in the hole, andplanarizing the surface of the substrate to the dielectric liner.

Another aspect of the present invention includes three-dimensionalintegrated circuits fabricated according to methods of the presentinvention.

It is to be understood that the invention is not limited in itsapplication to the details of construction and to the arrangements ofthe components set forth in the following description or illustrated inthe drawings. The invention is capable of other embodiments and of beingpracticed and carried out in various ways. In addition, it is to beunderstood that the phraseology and terminology employed herein are forthe purpose of description and should not be regarded as limiting.

As such, those skilled in the art will appreciate that the conception,upon which this disclosure is based, may readily be utilized as a basisfor the designing of other structures, methods, and systems for carryingout aspects of the present invention. It is important, therefore, thatthe claims be regarded as including such equivalent constructionsinsofar as they do not depart from the spirit and scope of the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a process flow diagram of an embodiment of the presentinvention.

FIG. 2.1 is a diagram of a substrate to be processed according to anembodiment of the present invention.

FIG. 2.2 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 2.3 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 2.4 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 2.5 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 2.6 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 2.7 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 2.8 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 2.9 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 2.10 is a diagram of a substrate processed according to anembodiment of the present invention.

FIG. 3 is a process flow diagram of an embodiment of the presentinvention.

FIG. 4.1 is a diagram of a substrate to be processed according to anembodiment of the present invention.

FIG. 4.2 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 4.3 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 4.4 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 4.5 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 4.6 is a diagram of a substrate partially processed according to anembodiment of the present invention.

FIG. 4.7 is a diagram of a substrate processed according to anembodiment of the present invention.

Skilled artisans appreciate that elements in the figures are illustratedfor simplicity and clarity and have not necessarily been drawn to scale.For example, the dimensions of some of the elements in the figures maybe exaggerated relative to other elements to help to improveunderstanding of embodiments of the present invention.

DESCRIPTION

The present invention pertains to interconnect metallization forthree-dimensional integrated circuits. More specifically, the presentinvention pertains to a process flow for forming holes and metal gapfillof the holes for through-hole vias for metallization lines runningthrough a semiconductor wafer or other substrate. The metallization isusually used for the upper level semiconductor device substrates used inthree-dimensional integrated circuits.

The operation of embodiments of the present invention will be discussedbelow, primarily, in the context of processing semiconductor wafers foruse in stacked wafer three-dimensional integrated circuits. Morespecifically, the operation of embodiments of the present invention isdiscussed below in the context of processing silicon wafers forthree-dimensional silicon integrated circuits. However, it is to beunderstood that embodiments in accordance with the present invention maybe used for other semiconductor devices and other semiconductor wafers.

In the following description of the figures, identical referencenumerals have been used when designating substantially identicalelements or steps that are common to the figures.

Reference is now made to FIG. 1 where there is shown a process flowdiagram 2 according to one embodiment of the present invention. Processflow diagram 2 shows a method of fabricating three-dimensionalintegrated circuits. More specifically, process flow diagram 2 showssubstrate processing for the three-dimensional integrated circuits.Process flow diagram 2 includes step 4, step 6, step 8, step 10, step12, step 14, and step 16.

Step 4 includes forming metal plug contacts through a hard mask and apremetal dielectric to electrically contact semiconductor transistorsfor the three-dimensional integrated circuits. Step 4 is performed on asubstrate for a three-dimensional integrated circuit. The semiconductortransistors are incorporated as part of the substrate. The semiconductortransistors can be formed by techniques known to persons of ordinaryskill in the art for forming transistors. Preferably, the transistorsare formed using standard technology for front end of line (FEOL)processing of semiconductor devices from semiconductor wafers or othersubstrates having a suitable semiconductor for transistors.

The semiconductor wafer has a premetal dielectric applied over thetransistors and the surface of a semiconductor wafer. The premetaldielectric can be any of the standard technology materials for premetaldielectrics used in standard technology FEOL processing of semiconductortransistors or other material suitable for use as a premetal dielectric.The premetal dielectric may comprise an electrically insulating materialsuch as boron phosphorus silicon glass (BPSG) or other glass withsuitable properties for a premetal dielectric.

The hard mask recited in step 4 comprises a material suitable for use asa hard mask for lithography purposes such as hard mask materialstypically used in processing semiconductor devices. The hard mask isdisposed as a layer over the premetal dielectric. Examples of some ofthe materials that can be used for the hard mask include, but are notlimited to, silicon carbide and silicon carbon nitride.

According to a preferred embodiment of the present invention, step 4includes etching contact vias through the hard mask and through thepremetal dielectric. The metal plugs are formed in the contact vias tomake electrical contact with the transistors. The metal plugs areplanarized so that they are coplanar with the surface of the hard mask.

The metal plugs may comprise standard technology metal plugs such astungsten plugs. As an option, the metal plugs may comprise copper metalplugs or metal plugs of other materials suitable for metal contacts totransistors. For copper metal plugs, the formation of the metal plugsmay include one or more additional steps to provide a passivationcoating or barrier for the copper.

Step 6 of process flow 2 includes etching a hole to the semiconductorusing a patterned photoresist process. More specifically, a dry etchprocess such as plasma etching and reactive ion etching is performedusing a patterned photoresist to etch through the hard mask and thepremetal dielectric. For some embodiments of the present invention,additional layers of dielectrics such as a dielectric for shallow trenchisolation may be present between the premetal dielectric and thesemiconductor. The additional dielectrics, if present, are also etchedin step 6.

The patterned photoresist is lithographically patterned so that theareas of the substrate intended for placement of the hole are exposedfor etching. The patterned photoresist etch process may include one ormore processes typically used for etching dielectric materials such asthe hard mask, the premetal dielectric, and the dielectric for shallowtrench isolation. Suitable equipment and processes for performing theetch in step 6 are available from companies such as Lam ResearchCorporation of Fremont, Calif.

Step 8 includes removing the photoresist and using the hard mask with ahard mask process to etch the hole into the semiconductor. The holeformed in the semiconductor is a blind hole. Suitable equipment andprocesses for etching the semiconductor are available from companiessuch as Lam Research Corporation of Fremont, Calif. The hole is etchedinto the semiconductor to an amount so that the hole has a depthsuitable for forming a through hole from the blind hole formed in step 8by removing material from the backside of the substrate during laterprocessing.

The dimensions of the hole formed in step 6 and step 8 are selectedbased on the design requirements for the three-dimensional integratedcircuits. According to one embodiment of the present invention, thedimensions of the hole may include diameters in the range of 1-10micrometers and depths of 25 micrometers to 40 micrometers, and allvalues, ranges, and subranges subsumed therein. For other embodiments ofthe present invention, the hole may have a diameter larger than 10micrometers and may have a depth greater than 40 micrometers.

Step 10 of process flow 2 includes deposition of a dielectric liner. Thedielectric liner is deposited over the surface of the substrate and thesurfaces of the hole formed in step 6 and step 8. A variety of suitabledielectrics can be used for the dielectric liner. Some examples ofmaterials that can be used for the dielectric liner include, but are notlimited to, tetraethyl ortho silicate oxide, silicon carbide, siliconcarbon nitride, carbon doped glass, aluminum oxide, and others.

Step 12 of process flow 2 includes depositing a metallization diffusionbarrier for a gapfill metal. Step 12 may not be needed for someembodiments of the present invention. More specifically, themetallization diffusion barrier may not be needed if the dielectricliner deposited in step 10 is capable of preventing diffusion of thegapfill metal. However, for a preferred embodiment of the presentinvention, copper metallization is used. Preferably, a metallizationdiffusion barrier suitable for use with copper metallization isdeposited in step 12. Examples of preferred metallization diffusionbarriers for copper include, but are not limited to, tantalum, tantalumnitride, tantalum on tantalum nitride, and ruthenium on tantalumnitride. In a preferred embodiment of the present invention, themetallization diffusion barrier includes ruthenium on tantalum nitridewith the ruthenium deposited by a process such as atomic layerdeposition and the tantalum nitride deposited by a process such asatomic layer deposition.

Step 14 of process flow 2 includes depositing the gapfill metal. Asindicated above, preferred embodiments for three-dimensional integratedcircuits according to the present invention use copper metallization.Step 14 includes depositing copper as the gapfill metal. A variety ofprocesses can be used for depositing the gapfill metal. Preferredprocesses for depositing copper for copper metallization include wetchemical processes such as electrochemical plating of copper and such aselectroless deposition of copper. As an option for some embodiments ofthe present invention for copper gapfill, a copper seed layer may alsobe deposited prior to depositing the gapfill copper.

Step 16 of process flow 2 includes planarization of the surface of thesubstrate to the hard mask. The planarization is done to remove excessmaterials on the surface of the substrate such as overburden from thegapfill metal deposition and other layers and to uncover the metalplugs. After the planarization, the surface of the metal plugs and thesurface of the gapfill metal in the hole are coplanar. This means thatmaking electrical contacts to the metal plugs and to the gapfill metalin the hole is more easily accomplished because vias etched to make theelectrical contacts to the metal plugs and to the gapfill metal requiresubstantially the same amount of etching.

Additional process steps following step 16 may include steps such asproviding a passivation or barrier layer over the gapfill metal, ifneeded. Further processing of the substrates include any additionalsteps needed to form one or more metallization levels using standardtechnologies for BEOL processing of semiconductor devices. In general,process flow 2 allows the FEOL processes to be carried out without majormodification of standard practices for FEOL processing. Similarly,process flow 2 allows the BEOL processes to be carried out without majormodification of standard practices for BEOL processing. In other words,process flow 2 allows formation of structures for through holemetallization for three-dimensional integrated circuits withoutsubstantial modification of standard practices for FEOL and BEOLprocessing.

Substrates processed according to process flow 2 will have additionalprocess steps to convert the metal filled blind hole into a through holefor a metallization via. According to preferred embodiments of thepresent invention, the through hole is formed by removing material fromthe back side of the substrate to open the bottom of the hole formed instep 6 and step 8. The removal of the material from the backside of thesubstrate can be accomplished using one or more or a combination ofknown processes such as grinding, etching, and chemical mechanicalplanarization. Standard processing practices can be used for verticalstacking and interconnection of the substrates into three-dimensionalintegrated circuits.

To further illustrate the process flow presented in FIG. 1, reference isnow made to FIG. 2.1 through FIG. 2.10 where there is shown a crosssectional side view of a section of a device wafer 20-1 to be processed(shown in FIG. 2.1) and as being processed (shown in FIG. 2.2 throughFIG. 2.10) according to process flow 2 in FIG. 1. Device wafer 20-1includes a substrate 22 comprising a semiconductor having a transistorthat includes source drain regions 24 and a gate 26 as commonly used insemiconductor device technologies. Optionally, substrate 22 may be asemiconductor wafer such as a silicon wafer with doped areas to formsource drain regions 24. Alternatively, substrate 22 may comprise aninsulating material such as sapphire or glass supporting a layer of asemiconductor such as silicon.

FIG. 2.2 shows a device wafer 20-2. Device wafer 20-2 includes devicewafer 20-1 having a premetal dielectric 28 and a layer of a hard mask30. Premetal dielectric 28 may comprise an electrically insulatingmaterial such as boron phosphorus silicon glass (BPSG) or other glasswith suitable properties for a premetal dielectric used in FEOLprocessing. Hard mask 30 is disposed over premetal dielectric 28.Examples of some of the materials that can be used for hard mask 30include, but are not limited to, silicon carbide and silicon carbonnitride.

FIG. 2.3 shows a device wafer 20-3 which includes device wafer 20-2having contact vias 32 etched through hard mask 30 and premetaldielectric 28 for the formation of contact plugs. Contact vias 32 can beetched using standard technology etch processes such as plasma etchingand reactive ion etching.

FIG. 2.4 shows a device wafer 20-4 which includes a device wafer 20-3having metal plugs 34 contacting source drain regions 24 and gate 26.Metal plugs 34 are formed in contact vias 32 and are planarized so thatthey are coplanar with the surface of hard mask 30. Metal plugs 34 maycomprise standard technology metal plugs such as tungsten plugs. As anoption, the metal plugs may comprise copper metal plugs or metal plugsof other materials suitable for metal contacts to transistors. Forcopper metal plugs, the formation of metal plugs 34 may include one ormore additional steps to provide a passivation coating or barrier overthe surface of the copper.

FIG. 2.5 shows a device wafer 20-5 which includes device wafer 20-4having a photoresist layer 36 applied to the surface. FIG. 2.6 shows adevice wafer 20-6 including device wafer 20-5 with photoresist layer 36having a patterned area 36A for etching. More specifically, photoresistlayer 36 is used with a photoresist etch process to etch through hardmask 30 and premetal dielectric 28.

If additional layers of dielectric are present before reaching thesemiconductor, then those additional layers of dielectric can also beetched using the photoresist etch process. Examples of some additionaldielectric layers that may need to be etched include dielectric layersfor shallow trench isolation and dielectrics for semiconductor oninsulator structures. After etching through the dielectrics, photoresistlayer 36 can be removed and a hard mask etch process can be used tocontinue etching into the semiconductor.

FIG. 2.7 shows a device wafer 20-7 which includes device wafer 20-6after completion of the etch processing. More specifically, photoresist36 has been removed and device wafer 20-7 has a hole 40 to be used forformation of a through hole via. Hole 40 has been formed by etchingthrough hard mask 30, premetal dielectric 28, any additional dielectriclayers that may be present in some device structures (additionaldielectric layers not shown in FIG. 2.7), and into the semiconductor.Hole 40 has been etched to the depth desired so that hole 40 can beconverted into a through hole via during later processing steps forfabrication of the three-dimensional integrated circuit. According toone embodiment of the present invention, the dimensions of hole 40 mayinclude diameters in the range of 1-10 micrometers and depths of 25micrometers to 40 micrometers, and all values, ranges, and subrangessubsumed therein. For other embodiments of the present invention, thehole may have a diameter larger than 10 micrometers and a depth greaterthan 40 micrometers.

FIG. 2.8 shows a device wafer 20-8 which includes device wafer 20-7 witha dielectric liner 42 deposit over the surface of device wafer 20-7including hole 40. Dielectric liner 42 is deposited so as to provideelectrical isolation between the semiconductor and the metallization tobe formed in hole 40. A variety of suitable dielectrics can be used fordielectric liner 42. Some examples of materials that can be used fordielectric liner 42 include, but are not limited to, tetraethyl orthosilicate oxide, silicon carbide, silicon carbon nitride, carbon dopedglass, aluminum oxide, and others.

FIG. 2.8 also shows device wafer 20-8 having a metallization diffusionbarrier 44 deposited over dielectric liner 42. Metallization diffusionbarrier 44 may not be needed for some embodiments of the presentinvention. More specifically, the metallization diffusion barrier maynot be needed if dielectric liner 42 is also capable of preventingdiffusion of the gapfill metal. This means that metallization diffusionbarrier 44 may be optional for some embodiments of the presentinvention. However, for a preferred embodiment of the present invention,copper metallization is used. Preferably, metallization diffusionbarrier 44 is included so as to be suitable for use with coppermetallization. Examples of preferred metallization diffusion barriersfor copper include, but are not limited to, tantalum, tantalum nitride,tantalum on tantalum nitride, and ruthenium on tantalum nitride. In apreferred embodiment of the present invention, metallization diffusionbarrier 44 includes ruthenium on tantalum nitride with the rutheniumdeposited by a process such as atomic layer deposition and the tantalumnitride deposited by a process such as atomic layer deposition.

FIG. 2.9 shows a device wafer 20-9 which includes device wafer 20-8further processed to include gapfill metal 46. After deposition ofgapfill metal 46, further process steps include planarization to thesurface of hard mask 30. The planarization is performed so as to removeoverburden metal that may have been formed during deposition of gapfillmetal 46 and to remove the portions of the barrier layer 44 and portionsof dielectric liner 42 that were deposited outside of hole 40. Theplanarization makes the surface of gapfill metal 46 coplanar with thesurface of hard mask 30 and metal plugs 34. For a preferred embodimentof the present invention, gapfill metal 46 comprises copper for coppermetallization. FIG. 2.9 further shows device wafer 20-9 having a sealinglayer 48 provided so as to at least isolate gapfill metal 46 from areasof the semiconductor device that could be harmed by contamination withgapfill metal 46, as can occur for copper metallization. Furthermore,for embodiments of the present invention that include using copper formetal plugs 34, sealing layer 48 can provide isolation for metal plugs34.

A variety of options is available for the material and configuration forsealing layer 48. As one option, sealing layer 48 may comprise adiffusion barrier material such as, but not limited to, silicon carbide,silicon carbon nitride, silicon nitride, and other dielectric materialswith sufficient diffusion barrier properties. Alternatively, sealinglayer 48 may comprise a barrier layer for copper metallization such as aselectively applied layer of cobalt tungsten boron phosphide or othermaterial with sufficient copper diffusion barrier properties.Embodiments of the present invention that include sealing layer 48selectively applied to the metallization will not include a continuouslayer for sealing layer 48 as shown in FIG. 2.9.

FIG. 2.10 shows a device wafer 20-10 which includes device wafer 20-9and BEOL structure 50. BEOL structure 50 includes one or moremetallization levels formed to interconnect the transistors and gapfillmetal 46. As an option, BEOL structure 50 may be formed using standardtechnology BEOL processes for multiple level metallization forelectronic devices. Further processing of electronic devices from devicewafer 20-10 may include process steps to remove material from thebackside of the substrate 22 so as to open the bottom of hole 40 to forma through hole. Still further processing includes stacking andinterconnecting device wafer 20-10 with another device wafer to form athree-dimensional integrated circuit. Alternatively, two or more ofdevice wafer 20-10 may be stacked and interconnected to form athree-dimensional integrated circuit. As another option, two or more ofdevice wafer 20-10 may be stacked and interconnected with another waferto form a three-dimensional integrated circuit.

Reference is now made to FIG. 3 where there is shown a process flowdiagram 103 according to another embodiment of the present invention.Process flow diagram 103 shows a method of fabricating three-dimensionalintegrated circuits. More specifically, process flow diagram 103 showssubstrate processing for the three-dimensional integrated circuits.Process flow diagram 103 includes step 105, step 107, step 110, step112, step 114, and step 117.

Step 105 includes forming metal plug contacts through a premetaldielectric to electrically contact semiconductor transistors for thethree-dimensional integrated circuits. Step 105 is performed on asubstrate for a three-dimensional integrated circuit. The semiconductortransistors are incorporated as part of the substrate. The semiconductortransistors can be formed by techniques known to persons of ordinaryskill in the art for forming transistors. Preferably, the transistorsare formed using standard technology for FEOL processing ofsemiconductor devices from semiconductor wafers or other substrateshaving a suitable semiconductor for transistors.

The semiconductor wafer has a premetal dielectric applied over thetransistors and the surface of a semiconductor wafer. The premetaldielectric can be any of the standard technology materials for premetaldielectrics used in standard technology front end of line processing ofsemiconductor transistors or other material suitable for use as apremetal dielectric. The premetal dielectric may comprise anelectrically insulating material such as boron phosphorus silicon glassor other glass with suitable properties for a premetal dielectric.

According to a preferred embodiment of the present invention, step 105includes etching contact vias through the premetal dielectric for themetal plugs to contact the transistors. The metal plugs are formed inthe contact vias and are planarized so that they are coplanar with thesurface of the premetal dielectric. The metal plugs may comprisestandard technology metal plugs such as tungsten plugs. As an option,the metal plugs may comprise copper metal plugs or metal plugs of othermaterials suitable for metal contacts to transistors. For copper metalplugs, the formation of the metal plugs may include one or moreadditional steps to provide a passivation coating or barrier for thecopper.

Step 107 of process flow 103 includes etching a hole to thesemiconductor using a patterned photoresist process. More specifically,a dry etch process such as plasma etching and reactive ion etching isperformed using a patterned photoresist to etch through the premetaldielectric and deep into the semiconductor. For some embodiments of thepresent invention additional layers of dielectrics such as a dielectricfor shallow trench isolation and a dielectric for semiconductor oninsulator structures may be present between the premetal dielectric andthe semiconductor. The additional dielectrics, if present, are alsoetched in step 107.

The patterned photoresist is lithographically patterned so that theareas of the substrate for placement of the hole are exposed foretching. The patterned photoresist etch process may include one or moreprocesses typically used for etching dielectric materials such as thepremetal dielectric, the dielectric for shallow trench isolation, thedielectric for semiconductor on insulator structures (if present), andthe semiconductor. Suitable equipment and processes for performing theetching in step 107 are available from companies such as Lam ResearchCorporation of Fremont, Calif.

The dimensions of the hole formed in step 107 are selected based on thedesign requirements for the three-dimensional integrated circuits.According to one embodiment of the present invention, the dimensions ofthe hole may include diameters in the range of 1-10 micrometers anddepths of 25 micrometers to 40 micrometers, and all values, ranges, andsubranges subsumed therein. For other embodiments of the presentinvention, the hole may have a diameter larger than 10 micrometers andmay have a depth greater than 40 micrometers.

Step 110 of process flow 103 includes deposition of a dielectric liner.The dielectric liner is deposited over the surface of the substrate andthe surfaces of the hole formed in step 107. A variety of suitabledielectrics can be used for the dielectric liner. Some examples ofmaterials that can be used for the dielectric liner include, but are notlimited to, tetraethyl ortho silicate oxide, silicon carbide, siliconcarbon nitride, aluminum oxide, carbon doped glass, and others. Thedielectric liner is deposited so as to provide electrical isolation forthe semiconductor.

Step 112 of process flow 103 includes depositing a metallizationdiffusion barrier for a gapfill metal. Step 112 may not be needed forsome embodiments of the present invention. More specifically, themetallization diffusion barrier may not be needed if the dielectricliner deposited in step 110 is capable of preventing diffusion of thegapfill metal. However, for a preferred embodiment of the presentinvention, copper metallization is used. Preferably, a metallizationdiffusion barrier suitable for use with copper metallization isdeposited in step 112. Examples of preferred metallization diffusionbarriers for copper include, but are not limited to, tantalum, tantalumnitride, tantalum on tantalum nitride, and ruthenium on tantalumnitride. In a preferred embodiment of the present invention, themetallization diffusion barrier includes ruthenium on tantalum nitridewith the ruthenium deposited by a process such as atomic layerdeposition and the tantalum nitride deposited by a process such asatomic layer deposition.

Step 114 of process flow 103 includes depositing the gapfill metal. Asindicated above, preferred embodiments for three-dimensional integratedcircuits according to the present invention use copper metallization.Step 114 includes depositing copper as the gapfill metal. A variety ofprocesses can be used for depositing the gapfill metal. Preferredprocesses for depositing copper for copper metallization include wetchemical processes such as electrochemical plating of copper and such aselectroless deposition of copper. As an option for some embodiments ofthe present invention for copper gapfill, a copper seed layer may alsobe deposited prior to depositing the gapfill copper.

Step 117 of process flow 103 includes planarization of the surface ofthe substrate to the dielectric liner. The planarization is done toremove excess materials on the surface of the substrate such asoverburdened from the gapfill metal deposition and other layers so thatthe only the dielectric liner remains over the metal plugs. After theplanarization, the surface of the gapfill metal is coplanar with thesurface of the dielectric liner.

Additional process steps following step 117 may include steps such asproviding a passivation or barrier layer over the gapfill metal, ifneeded. Further processing of the substrates include any additionalsteps needed to form one or more metallization levels using standardtechnologies for BEOL processing of semiconductor devices. In general,process flow 103 allows the FEOL processes to be carried out withoutmajor modification of standard practices for FEOL processing. Similarly,process flow 103 allows the BEOL processes to be carried out withoutmajor modification of standard practices for BEOL processing. In otherwords, process flow 103 allows formation of structures for through holemetallization for three-dimensional integrated circuits withoutsubstantial modification of standard practices for FEOL and BEOLprocessing.

Substrates processed according to process flow 103 will have additionalprocess steps to convert the metal filled blind hole into a through holevia for metallization. According to preferred embodiments of the presentinvention, the through hole is formed by removing material from thebackside of the substrate to open the bottom of the hole formed in step107. The removal of the material from the backside of the substratemaybe accomplished using one or more or a combination of known processessuch as grinding, etching, and chemical mechanical planarization.Standard processing practices can be used for vertical stacking andinterconnection of the substrates into three-dimensional integratedcircuits.

To further illustrate the process flow presented in FIG. 3, reference isnow made to FIG. 4.1 through FIG. 4.7 where there is shown a crosssectional side view of a section of a device wafer being processed(shown in FIG. 4.1 through FIG. 4.7) according to process flow 103 inFIG. 3. FIG. 4.1 shows a device wafer 120-1 having a substrate 122comprising a semiconductor having a transistor that includes sourcedrain regions 124 and a gate 126 as commonly used in semiconductordevice technologies. Optionally, substrate 122 may be a semiconductorwafer such as a silicon wafer with doped areas to form source drainregions 124. Alternatively, substrate 122 may comprise an insulatingmaterial such as sapphire or glass supporting a layer of a semiconductorsuch as silicon.

Device wafer 120-1 includes a premetal dielectric 128. Premetaldielectric 128 may comprise an electrically insulating material such asboron phosphorus silicon glass or other glass with suitable propertiesfor a premetal dielectric used in FEOL processing. FIG. 4.1 shows devicewafer 120-1 having contact vias etched through premetal dielectric 128.Device wafer 120-1 also includes metal plugs 134 formed in the contactvias so as to electrically contact source drain regions 124 and gate126. Metal plugs 134 are planarized so that they are coplanar with thesurface of premetal dielectric 128. Metal plugs 134 may comprisestandard technology metal plugs such as tungsten plugs. As an option,metal plugs 134 may comprise copper metal plugs or metal plugs of othermaterials suitable for electrical contacts to transistors. For coppermetal plugs, the formation of metal plugs 134 may include one or moreadditional steps to provide a passivation coating or barrier for thecopper. The contact vias can be etched using standard technology etchprocesses such as plasma etching and reactive ion etching.

FIG. 4.2 shows a device wafer 120-2 which includes device wafer 120-1having a photoresist layer 136 applied to the surface. FIG. 4.3 shows adevice wafer 120-3 including device wafer 120-2 with photoresist layer136 having a patterned area 136A for etching. More specifically,photoresist layer 136 is used with a photoresist etch process to etchthrough premetal dielectric 128. If additional layers of dielectric arepresent before reaching the semiconductor, then those additional layersof dielectric can also be etched using the photoresist etch process.Examples of some additional dielectric layers that may need to be etchedinclude dielectric layers for shallow trench isolation and dielectricsfor semiconductor on insulator structures.

FIG. 4.4 shows a device wafer 120-4 which includes device wafer 120-3after completion of the etch processing. More specifically, photoresist136 has been removed and device wafer 120-4 has a hole 140 to be usedfor formation of a through hole via. Hole 140 has been formed by etchingthrough premetal dielectric 28, any additional dielectric layers thatmay be present in some device structures (additional dielectric layersnot shown in FIG. 4.4) and into the semiconductor. Hole 140 has beenetched to the depth desired so that hole 140 can be converted into athrough hole via during later processing steps for fabrication of thethree-dimensional integrated circuit. According to one embodiment of thepresent invention, the dimensions of hole 140 may include diameters inthe range of 1-10 micrometers and depths of 25 micrometers to 40micrometers, and all values, ranges, and subranges subsumed therein. Forother embodiments of the present invention, the hole may have a diameterlarger than 10 micrometers and a depth greater than 40 micrometers.

FIG. 4.5 shows a device wafer 120-5 which includes device wafer 120-4and a dielectric liner 142 deposited over the surface of device wafer120-4 including hole 140. Dielectric liner 142 is deposited so as toprovide electrical isolation between the semiconductor and themetallization to be formed in hole 140. A variety of suitabledielectrics can be used for dielectric liner 142. Some examples ofmaterials that can be used for dielectric liner 42 include, but are notlimited to, tetraethyl ortho silicate oxide, silicon carbide, siliconcarbon nitride, carbon doped glass, aluminum oxide, and others.

FIG. 4.5 also shows device wafer 120-5 having a metallization diffusionbarrier 144 deposited over dielectric liner 142. Metallization diffusionbarrier 144 may not be needed for some embodiments of the presentinvention. More specifically, metallization diffusion barrier 144 maynot be needed if dielectric liner 142 is also capable of preventingdiffusion of the gapfill metal. This means that metallization diffusionbarrier 144 may be optional for some embodiments of the presentinvention. However, for a preferred embodiment of the present invention,copper metallization is used. Preferably, metallization diffusionbarrier 144 is included so as to be suitable for use with coppermetallization. Examples of preferred metallization diffusion barriersfor copper include, but are not limited to, tantalum, tantalum nitride,tantalum on tantalum nitride, and ruthenium on tantalum nitride. In apreferred embodiment of the present invention, metallization diffusionbarrier 144 includes ruthenium on tantalum nitride with the rutheniumdeposited by a process such as atomic layer deposition and the tantalumnitride deposited by a process such as atomic layer deposition.

FIG. 4.6 shows a device wafer 120-6 which includes device wafer 120-5further processed to include a gapfill metal 146. After deposition ofgapfill metal 146, further process steps include planarization to thesurface of dielectric liner 142 disposed outside of hole 140. Theplanarization is performed so as to remove overburden metal that mayhave been formed during deposition of gapfill metal 146 and to removethe portions of barrier layer 144 that were deposited outside of hole140. The planarization makes the surface of gapfill metal 146 coplanarwith dielectric liner 142 over metal plugs 134. For a preferredembodiment of the present invention, gapfill metal 146 comprises copperfor copper metallization. FIG. 4.6 further shows device wafer 120-6having a sealing layer 148 provided so as to at least isolate gapfillmetal 146 from areas of the semiconductor device that could be harmed bycontamination with gapfill metal 146, as can occur for coppermetallization.

A variety of options is available for the material and configuration forsealing layer 148. As one option, sealing layer 148 may comprise adiffusion barrier material such as, but not limited to, silicon carbide,silicon carbon nitride, silicon nitride, and other dielectric materialswith sufficient diffusion barrier properties. Alternatively, sealinglayer 148 may comprise a barrier layer for copper metallization such asa selectively applied layer of cobalt tungsten boron phosphide or othermaterial with sufficient copper diffusion barrier properties.Embodiments of the present invention that include sealing layer 148selectively applied to the metallization will not include a continuouslayer for sealing layer 148 as shown in FIG. 4.6.

FIG. 4.7 shows a device wafer 120-7 which includes device wafer 120-6and BEOL structure 150. BEOL structure 150 includes one or moremetallization levels formed to interconnect the transistors and gapfillmetal 146. As an option, BEOL structure 150 may be formed using standardtechnology BEOL processes for multiple level metallization forelectronic devices. Further processing of electronic devices from devicewafer 120-7 may include process steps to remove material from thebackside of the substrate 122 so as to open the bottom of hole 140 toform a through hole. Still further processing includes stacking andinterconnecting device wafer 120-7 with another device wafer to form athree-dimensional integrated circuit. Alternatively, two or more ofdevice wafer 120-7 may be stacked and interconnected to form athree-dimensional integrated circuit. As another option, two or more ofdevice wafer 120-7 may be stacked and interconnected with another waferto form a three-dimensional integrated circuit.

In the foregoing specification, the invention has been described withreference to specific embodiments. However, one of ordinary skill in theart appreciates that various modifications and changes can be madewithout departing from the scope of the present invention as set forthin the claims below. Accordingly, the specification and figures are tobe regarded in an illustrative rather than a restrictive sense, and allsuch modifications are intended to be included within the scope ofpresent invention.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any element(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature or element of any or all the claims.

As used herein, the terms “comprises,” “comprising,” “includes,”“including,” “has,” “having,” “at least one of,” or any other variationthereof, are intended to cover a non-exclusive inclusion. For example, aprocess, method, article, or apparatus that comprises a list of elementsis not necessarily limited only to those elements but may include otherelements not expressly listed or inherent to such process, method,article, or apparatus. Further, unless expressly stated to the contrary,“or” refers to an inclusive or and not to an exclusive or. For example,a condition A or B is satisfied by any one of the following: A is true(or present) and B is false (or not present), A is false (or notpresent) and B is true (or present), and both A and B are true (orpresent).

Further, unless expressly stated to the contrary, “at least one of” isto be interpreted to mean “one or more.” For example, a process, method,article, or apparatus that comprises one or more of a list of elementsand if one or more of the elements comprises a sub-list of sub-elements,then the sub-elements are to be considered in the same manner as theelements. For example, at least one of A and B is satisfied by any oneof the following: A is true (or present) and B is false (or notpresent), A is false (or not present) and B is true (or present), andboth A and B are true (or present).

1. A method of processing a substrate comprising a semiconductor forthree dimensional integrated circuits, the method comprising: formingmetal plug contacts through a hard mask and a premetal dielectric totransistors in the semiconductor; etching a hole for a through-hole viafrom the hard mask to the semiconductor using a patterned photoresistprocess; removing the patterned photoresist; using a hard mask processto etch the hole to an amount into the semiconductor; depositing adielectric liner to electrically isolate the hole from thesemiconductor; depositing a gapfill metal to fill the hole; andplanarizing the surface of the substrate to the hard mask.
 2. The methodof claim 1, further comprising depositing a diffusion barrier for thegapfill metal.
 3. The method of claim 1, wherein forming the metal plugsis accomplished by deposition and planarization of copper or depositionand planarization of tungsten.
 4. The method of claim 1, wherein thehard mask comprises silicon carbide or silicon carbon nitride.
 5. Themethod of claim 1, wherein depositing the dielectric liner isaccomplished by deposition of aluminum oxide.
 6. The method of claim 1,wherein depositing the dielectric liner is accomplished by deposition oftetraethyl ortho silicate oxide.
 7. The method of claim 1, whereindepositing the dielectric liner is accomplished by deposition of carbondoped glass, silicon carbide, or silicon carbon nitride,
 8. The methodof claim 2, wherein depositing the diffusion barrier is accomplished bydeposition of tantalum.
 9. The method of claim 2, wherein depositing thediffusion barrier is accomplished by deposition of tantalum anddeposition of tantalum nitride.
 10. The method of claim 2, whereindepositing the diffusion barrier is accomplished by deposition ofruthenium and deposition of tantalum nitride.
 11. The method of claim 2,wherein depositing the diffusion barrier is accomplished by atomic layerdeposition of ruthenium and atomic layer deposition of tantalum nitride.12. The method of claim 2, wherein depositing the gapfill metal isaccomplished by electroless deposition of copper or electrochemicalplating of copper.
 13. The method of claim 1, further comprising sealingthe top surface of the planarized gapfill metal.
 14. The method of claim1, wherein the gapfill metal comprises copper and further comprisingsealing the top surface of the planarized gapfill metal with siliconcarbide, silicon carbon nitride, or cobalt tungsten boron phosphide. 15.The method of claim 1, further comprising performing one or more backend of line process steps to form one or more metallization levels tointerconnect the transistors.
 16. The method of claim 1, furthercomprising performing one or more back end of line process steps to formone or more metallization levels so as to interconnect the transistorsand etching vias to the same depth to contact the metal plugs and tocontact the gapfill metal in the hole.
 17. A three dimensionalintegrated circuit having one or more substrates processed according tothe method of claim
 1. 18. A method of processing a substrate comprisinga semiconductor for three dimensional integrated circuits, the methodcomprising: forming metal plug contacts through a premetal dielectric totransistors in the semiconductor; etching a hole for a through-hole viathrough the premetal dielectric to an amount into the semiconductor;depositing a dielectric liner to electrically isolate the hole from thesemiconductor; depositing a gapfill metal to fill the hole; andplanarizing the top surface of the substrate to the dielectric liner.19. The method of claim 18, further comprising depositing a diffusionbarrier for the gapfill metal.
 20. The method of claim 18, whereindepositing the dielectric liner is accomplished by deposition ofaluminum oxide.
 21. The method of claim 18, wherein depositing thedielectric liner is accomplished by deposition of carbon doped glass ortetraethyl ortho silicate oxide.
 22. The method of claim 18, whereindepositing the dielectric liner is accomplished by deposition of siliconcarbide.
 23. The method of claim 18, wherein depositing the dielectricliner is accomplished by deposition of silicon carbon nitride.
 24. Themethod of claim 19, wherein depositing the diffusion barrier isaccomplished by deposition of tantalum.
 25. The method of claim 19,wherein depositing the diffusion barrier is accomplished by depositionof tantalum and deposition of tantalum nitride.
 26. The method of claim19, wherein depositing the diffusion barrier is accomplished bydeposition of ruthenium and deposition of tantalum nitride.
 27. Themethod of claim 19, wherein depositing the diffusion barrier isaccomplished by atomic layer deposition of ruthenium and atomic layerdeposition of tantalum nitride.
 28. The method of claim 18, whereindepositing the gapfill metal is accomplished by electroless depositionof copper or electrochemical plating of copper.
 29. The method of claim18, further comprising sealing the top surface of the planarized gapfillmetal.
 30. The method of claim 18, wherein the gapfill metal comprisescopper and further comprising sealing the top surface of the planarizedgapfill metal with silicon carbide, silicon carbon nitride, or cobalttungsten boron phosphide.
 31. The method of claim 18, further comprisingperforming one or more back end of line process steps to form one ormore metallization levels to interconnect the transistors.
 32. A threedimensional integrated circuit having one or more substrates processedaccording to the method of claim
 18. 33. A microelectronic devicecomprising: at least one substrate having semiconductor transistorsformed therein, the substrate having at least one hole for a throughhole via; a pre-metal dielectric formed over the semiconductortransistors; a hard mask over the pre-metal dielectric; metal plugsformed through the hard mask and the pre-metal dielectric toelectrically contact the transistors; a gapfill metal in the at leastone hole, the gapfill metal being planarized so that the metal plugs andthe gapfill metal are substantially coplanar with the top surface of thehard mask.
 34. The microelectronic device of claim 33, wherein thesubstrate comprises a silicon wafer, the gapfill metal comprises copper,the metal plugs comprise copper, and the hard mask comprises siliconcarbide or silicon carbon nitride.
 35. The microelectronic device ofclaim 33, wherein the substrate comprises a silicon wafer, the gapfillmetal comprises copper, the metal plugs comprise tungsten, and the hardmask comprises silicon carbide or silicon carbon nitride.
 36. Themicroelectronic device of claim 33, further comprising a dielectricliner substantially surrounding the gapfill metal.
 37. Themicroelectronic device of claim 33, further comprising a diffusionbarrier for the gapfill metal substantially surrounding the gapfillmetal.